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Package Marking and Ordering Information
Part Number
FDB088N08
Top Mark
FDB088N08
Package
D 2 -PAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
24 mm
Quantity
800 units
Electrical Characteristics
T C = 25 o C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BV DSS
Drain to Source Breakdown Voltage
I D = 250 μ A, V GS = 0 V, T C = 25 o C
75
-
-
V
Δ BV DSS
/ Δ T J
I DSS
I GSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I D = 250 μ A, Referenced to
V DS = 75 V, V GS = 0 V
V DS = 75 V, T C = 150 o C
V GS = ±20 V, V DS = 0 V
25 o C
-
-
-
-
0.07
-
-
-
-
1
500
±100
V/ o C
μ A
nA
On Characteristics
V GS(th)
R DS(on)
g FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V GS = V DS , I D = 250 μ A
V GS = 10 V, I D = 75 A
V DS = 10 V, I D = 37.5 A
2.0
-
-
-
7.3
300
4.0
8.8
-
V
m Ω
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = 25 V, V GS = 0 V,
f = 1 MHz
-
-
-
4960
355
200
6595
470
300
pF
pF
pF
Q g(tot)
Q gs
Q gd
R G
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Gate Resistance
V DS = 60 V, I D = 75 A,
V GS = 10 V
f = 1 MHz
(Note 4)
-
-
-
-
91
22
28
-
118
-
-
4
nC
nC
nC
Ω
Switching Characteristics
t d(on)
t r
t d(off)
t f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V DD = 37.5 V, I D = 75 A,
R G = 25 Ω, V GS = 10 V
(Note 4)
-
-
-
-
45
158
244
102
100
326
498
214
ns
ns
ns
ns
Drain-Source Diode Characteristics
I S
I SM
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
85
340
A
A
V SD
t rr
Q rr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V GS = 0 V, I SD = 75 A
V GS = 0 V, I SD = 75 A,
dI F /dt = 100 A/ μ s
-
-
-
-
41.1
80.7
1.25
-
-
V
ns
nC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 0.11 mH, I AS = 75 A, V DD = 50 V, R G = 25 Ω , starting T J = 25 ° C.
3. I SD ≤ 75 A, di/dt ≤ 200 A/ μ s, V DD ≤ BV DSS , starting T J = 25 ° C.
4. Essentially independent of operating temperature typical characteristics.
?2009 Fairchild Semiconductor Corporation
FDB088N08 Rev. C2
2
www.fairchildsemi.com
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